Cheng Ruoran, Zhang Chunli. ANALYSIS OF THE PIEZOTRONIC EFFECT OF A PIEZOELETRIC SEMICONDUCTOR FIBER UNDER MUTIPLE LOCAL TEMPERATURE LOADINGS[J]. Chinese Journal of Theoretical and Applied Mechanics, 2020, 52(5): 1295-1303. DOI: 10.6052/0459-1879-20-128
Citation:
Cheng Ruoran, Zhang Chunli. ANALYSIS OF THE PIEZOTRONIC EFFECT OF A PIEZOELETRIC SEMICONDUCTOR FIBER UNDER MUTIPLE LOCAL TEMPERATURE LOADINGS[J]. Chinese Journal of Theoretical and Applied Mechanics, 2020, 52(5): 1295-1303. DOI: 10.6052/0459-1879-20-128
Cheng Ruoran, Zhang Chunli. ANALYSIS OF THE PIEZOTRONIC EFFECT OF A PIEZOELETRIC SEMICONDUCTOR FIBER UNDER MUTIPLE LOCAL TEMPERATURE LOADINGS[J]. Chinese Journal of Theoretical and Applied Mechanics, 2020, 52(5): 1295-1303. DOI: 10.6052/0459-1879-20-128
Citation:
Cheng Ruoran, Zhang Chunli. ANALYSIS OF THE PIEZOTRONIC EFFECT OF A PIEZOELETRIC SEMICONDUCTOR FIBER UNDER MUTIPLE LOCAL TEMPERATURE LOADINGS[J]. Chinese Journal of Theoretical and Applied Mechanics, 2020, 52(5): 1295-1303. DOI: 10.6052/0459-1879-20-128
The polarization potential resulted from a temperature change through a series coupling effects can significantly change physical fields in piezoelectric semiconductor (PS) structures, which has been found important engineering applications in wearable electronics and temperature-related semiconductor electron devices. Using the one-dimensional multi-field coupling model for thermo-piezoelectric semiconductors, we study the effect of multiple local temperature changes on the behaviors of PS fibers. Based on the linearized current constitutive relations, we obtain the analytical solutions. For instance, a PS fiber under two local temperature changes is numerically studied. The effect of local temperature changes on the distributions of the displacement, potential, electric displacement, polarization and carrier are examined. For large temperature changes, we conduct a nonlinear analysis by COMSOL using the nonlinear current model. The numerical results show that the potential barrier and well produced by the temperature changes through a series of coupling effects depend on the magnitude of the temperature change and the thermal load position. This provides a useful theoretical guidance in the designing of devices.
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