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INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION[J]. Chinese Journal of Theoretical and Applied Mechanics, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913
Citation: INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION[J]. Chinese Journal of Theoretical and Applied Mechanics, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913
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INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION

  • 清华大学工程力学系

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  • . Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number.
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