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陈熙, 薛明伦. 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算[J]. 力学学报, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913
引用本文: 陈熙, 薛明伦. 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算[J]. 力学学报, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913
INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION[J]. Chinese Journal of Theoretical and Applied Mechanics, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913
Citation: INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION[J]. Chinese Journal of Theoretical and Applied Mechanics, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913

外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算

INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION

  • 摘要: 数值分析结果表明,外加磁场可以改变熔融半导体中的流型,几千高斯的磁场可以显著地减小熔体的流动,但对温度场影响不大。

     

    Abstract: . Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number.

     

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