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中文核心期刊

X射线衍射法测量碳化硅单晶的残余应力

MEASUREMENT OF RESIDUAL STRESS IN SINGLE-CRYSTAL SIC BY X-RAY DIFFRACTION METHOD

  • 摘要: 为了准确评估晶体的质量、提高器件的使用性能, 本文围绕单晶碳化硅材料残余应力方面开展了相关研究工作. 首先通过对原有的多重线性回归分析方法加以改进, 推导出适用于求解六方晶系单晶碳化硅试样所处应力状态的相关理论. 其次, 采用该方法对沿着10\overline 1 0取向生长的6H-SiC单晶片进行了残余应力检测, 同时选用214晶面族作为测量衍射面. 最后, 探究了来源于不同晶面组数的数据进行计算时对残余应力测量结果的影响. 结果显示: 采用多重线性回归分析方法可以实现单晶6H-SiC的面内残余应力的测定; 当给定无应力晶面间距d0的精确值时, 该应力结果的误差高于选用5组以上(hkl)晶面数计算得到的残余应力结果的误差; 如果d0未知, 则随着参与应力计算的晶面组数的增加, 平面残余应力的误差结果会逐渐降低并趋于平稳. 这表明实验测定的残余应力结果具有较高的精度. 另外, 为了保证实验测得的应力结果的可靠性, 应该选用六组及以上衍射面数通过多元回归分析方法来求解单晶碳化硅试样所处的残余应力状态.

     

    Abstract: Residual stress will be generated during its preparation, processing and service of silicon carbide single crystal, which destroys its integrity and restricts the excellent performance and reliability of devices. In order to accurately evaluate the crystal quality and improve device performance, research on the measurement of residual stress in single crystal silicon carbide was carried out in this manuscript. Firstly, the relevant theory for solving the residual stress state of single crystal silicon carbide with a hexagonal crystal structure was deduced by improving the original multiple regression analysis method. Secondly, the residual stresses in 6H-SiC single crystal wafer grown along the 10\overline 1 0 orientation was detected by this method. And 214 crystal plane family of silicon carbide single crystal wafer was selected as the measured diffraction plane. Finally, error analysis of the measurement results calculated by applying the data for different numbers of (hkl) reflections was investigated to illustrate the influence of the number of lattice planes on residual stress results. The results indicated that the in-plane stress components of single crystalline 6H-SiC can be determined by multiple regression analysis; the standard deviation was higher than those calculated based on more than five sets of (hkl) crystal planes for stress calculation when given the value of the stress-free lattice spacing d0. And if the unstressed interplanar spacing was unknown, as the number of crystal planes increases, the error results of plane residual stress gradually decreased. Besides, the error results changed slowly and even tended to steady state when at least six crystal planes were used in the stress calculation. This phenomenon suggests that the experimental residual stress results have high accuracy and high precise. In addition, six or more crystal planes should be selected to solve the residual stress state of silicon carbide single crystal wafer to ensure the reliability of the experimental results.

     

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