外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算

INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION

摘要: 数值分析结果表明,外加磁场可以改变熔融半导体中的流型,几千高斯的磁场可以显著地减小熔体的流动,但对温度场影响不大。
- CZ法中熔体对流 /
- 磁场影响 /
- 数值模拟
Abstract: . Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number.
- melt flow in GZ crystal growth /
- magnetic field effect /
- numerical simulation