利用维氏和玻氏压头表征半导体材料断裂韧性1)
STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1)
利用维氏和玻氏压头表征半导体材料断裂韧性1) |
| 刘明, 侯冬杨, 高诚辉 |
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STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1) |
| Liu Ming, Hou Dongyang, Gao Chenghui |
| 图2 维氏压头下Si (111)和4H-SiC材料裂纹长度$c$的概率密度函数图和正态性检验图 |
| Fig.2 Probability density function diagram and normal inspection diagram of crack length $c$ of Si (111) and 4H-SiC under Vickers indenter |
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