利用维氏和玻氏压头表征半导体材料断裂韧性1)
STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1)
利用维氏和玻氏压头表征半导体材料断裂韧性1) |
| 刘明, 侯冬杨, 高诚辉 |
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STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1) |
| Liu Ming, Hou Dongyang, Gao Chenghui |
| 图1 单晶硅和碳化硅维氏和玻氏压痕的光学图片 |
| Fig.1 Optical micrographs of the Vickers and Berkovich indentation for Si (111) and 4H-SiC |
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