利用维氏和玻氏压头表征半导体材料断裂韧性1)
STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1)
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利用维氏和玻氏压头表征半导体材料断裂韧性1) |
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| 刘明, 侯冬杨, 高诚辉 | |
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STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1) |
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| Liu Ming, Hou Dongyang, Gao Chenghui | |
| 表5 利用玻氏压头评估单晶硅和碳化硅材料$K_{\rm IC}$时适用公式的修正系数$k_{\rm B}$ |
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| Table 5 The correction coefficient $k_{\rm B}$ of applicable equations when the fracture toughness of Si (111) and 4H-SiC is determined by Berkovich indenter |
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