利用维氏和玻氏压头表征半导体材料断裂韧性1)
STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1)
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利用维氏和玻氏压头表征半导体材料断裂韧性1) |
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| 刘明, 侯冬杨, 高诚辉 | |
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STUDY ON FRACTURE TOUGHNESS OF SEMICONDUCTOR MATERIAL USING VICKERS AND BERKOVICH INDENTERS1) |
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| Liu Ming, Hou Dongyang, Gao Chenghui | |
| 表4 玻氏压头下单晶硅和碳化硅材料的$K_{\rm IC}$计算值 |
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| Table 4 The fracture toughness of Si (111) and 4H-SiC determined by Berkovich indenter |
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